Nonvolatile memory device with upper source plane

专利名称：Nonvolatile memory device with upper

source plane and buried bit line

发明人：Young-Ok Hong申请号：US13608652申请日：20120910公开号：US09000510B2公开日：20150407

专利附图：

摘要：A nonvolatile memory device includes: a channel layer extending in a verticaldirection from a substrate; a plurality of interlayer dielectric layers and word linesalternately stacked along the channel layer over the substrate; a bit line formed under

plurality of interlayer dielectric layers and word lines, coupled to the channel layer, andextending in a direction crossing the word lines; and a common source layer coupled tothe channel layer and formed over the plurality of interlayer dielectric layers and wordlines.

申请人：Young-Ok Hong

地址：Gyeonggi-do KR

国籍：KR

代理机构：IP&T Group LLP

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